Номер запчасти изготовителя | количество | цена | серия | упаковка | Статус | Пакет/кейс | Тип монтажа | Скорость | Время обратного восстановления (trr) | Технологии | Емкость @ Вр, Ф | Ток – средний выпрямленный (Io) | Пакет устройств поставщика | Рабочая температура - соединение | Оценка | Напряжение — обратное постоянное напряжение (Вр) (Макс.) | Напряжение – вперед (Vf) (Макс) @ If | Ток – обратная утечка @ Vr | Квалификация |
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10,837
In Stock
|
Active
|
Gen-III
|
Tube
|
Active
|
TO-247-3 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 654pF @ 1V, 1MHz | 10A | TO-247-3 | -55°C ~ 175°C | - | 650 V | 1.7 V @ 10 A | 120 µA @ 650 V | - |
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11,601
In Stock
|
Active
|
Tube
|
Active
|
TO-220-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 392pF @ 1V, 1MHz | 12A | TO-220-2 | -55°C ~ 175°C | - | 650 V | 1.7 V @ 12 A | 80 µA @ 650 V | - | |
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8,777
In Stock
|
Active
|
Gen-III
|
Tube
|
Active
|
TO-220-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 990pF @ 1V, 1MHz | 30A | TO-220-2 | -55°C ~ 175°C | - | 650 V | 1.7 V @ 30 A | 370 µA @ 650 V | - |
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8,251
In Stock
|
Active
|
Tube
|
Active
|
TO-247-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 510pF @ 1V, 1MHz | 10A | TO-247-2 | -55°C ~ 175°C | - | 1200 V | 1.6 V @ 10 A | 110 µA @ 1200 V | - | |
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16,248
In Stock
|
Active
|
Tube
|
Active
|
TO-247-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 2340pF @ 1V, 1MHz | 50A | TO-247-2 | -55°C ~ 175°C | - | 1200 V | 1.7 V @ 50 A | 400 µA @ 1200 V | - | |
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1,939
In Stock
|
Active
|
Gen-III
|
Tube
|
Active
|
TO-220-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 500pF @ 1V, 1MHz | 16A | TO-220-2 | -55°C ~ 175°C | - | 650 V | 1.7 V @ 16 A | 100 µA @ 650 V | - |
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3,290
In Stock
|
Active
|
Tube
|
Active
|
TO-247-3 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 510pF @ 1V, 1MHz | 10A | TO-247-3 | -55°C ~ 175°C | - | 1200 V | 1.6 V @ 10 A | 110 µA @ 1200 V | - | |
|
7,463
In Stock
|
Active
|
Tube
|
Active
|
TO-247-3 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 1980pF @ 1V, 1MHz | 30A | TO-247-3 | -55°C ~ 175°C | - | 650 V | 1.7 V @ 30 A | 740 µA @ 650 V | - | |
|
10,056
In Stock
|
Active
|
Tube
|
Active
|
TO-220-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 510pF @ 1V, 1MHz | 10A | TO-220-2 | -55°C ~ 175°C | - | 1200 V | 1.6 V @ 10 A | 110 µA @ 1200 V | - | |
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1,407
In Stock
|
Active
|
Tube
|
Active
|
TO-247-2 | Through Hole | No Recovery Time > 500mA (Io) | 0 ns | SiC (Silicon Carbide) Schottky | 810pF @ 1V, 1MHz | 20A | TO-247-2 | -55°C ~ 175°C | - | 1200 V | 1.7 V @ 20 A | 190 µA @ 1200 V | - |