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Массивы полевых транзисторов, МОП-транзисторов
производитель
серия
упаковка
Статус
Пакет/кейс
Тип монтажа
Конфигурация
Рабочая Температура
Технологии
Мощность - Макс.
Напряжение стока к источнику (Vdss)
Ток — непрерывный сток (Id) при 25°C
Входная емкость (СНПЧ) (макс.) @ Vds
Rds включен (макс.) @ Id, Vgs
Заряд затвора (Qg) (Макс.) @ Vgs
Особенность полевого транзистора
Vgs(th) (Макс) @ Id
Пакет устройств поставщика
Оценка
Квалификация
Складские опции
Окружающая среда опции
медиа
рынок продукция
529 Результаты
Номер запчасти изготовителя количество цена серия упаковка Статус Пакет/кейс Тип монтажа Конфигурация Рабочая Температура Технологии Мощность - Макс. Напряжение стока к источнику (Vdss) Ток — непрерывный сток (Id) при 25°C Входная емкость (СНПЧ) (макс.) @ Vds Rds включен (макс.) @ Id, Vgs Заряд затвора (Qg) (Макс.) @ Vgs Особенность полевого транзистора Vgs(th) (Макс) @ Id Пакет устройств поставщика Оценка Квалификация
ALD1103SBL
ALD1103SBL
MOSFET 2N/2P-CH 10.6V 14SOIC
Advanced Linear Devices, Inc.
1,099
In Stock
Active
Tube
Active
 14-SOIC (0.154", 3.90mm Width) Surface Mount 2 N and 2 P-Channel Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V 40mA, 16mA 10pF @ 5V 75Ohm @ 5V - - 1V @ 10µA 14-SOIC - -
ALD1101PAL
ALD1101PAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices, Inc.
1,085
In Stock
Active
Tube
Active
 8-DIP (0.300", 7.62mm) Through Hole 2 N-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - - 75Ohm @ 5V - - 1V @ 10µA 8-PDIP - -
ALD1116PAL
ALD1116PAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices, Inc.
1,085
In Stock
Active
Tube
Active
 8-DIP (0.300", 7.62mm) Through Hole 2 N-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - 3pF @ 5V 500Ohm @ 5V - - 1V @ 1µA 8-PDIP - -
ALD1117SAL
ALD1117SAL
MOSFET 2P-CH 10.6V 8SOIC
Advanced Linear Devices, Inc.
1,548
In Stock
Active
Tube
Active
 8-SOIC (0.154", 3.90mm Width) Surface Mount 2 P-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - 3pF @ 5V 1800Ohm @ 5V - - 1.2V @ 1µA 8-SOIC - -
ALD110900SAL
ALD110900SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices, Inc.
1,309
In Stock
Active
EPAD®, Zero Threshold™
Tube
Active
 8-SOIC (0.154", 3.90mm Width) Surface Mount 2 N-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - 2.5pF @ 5V 500Ohm @ 4V - - 20mV @ 1µA 8-SOIC - -
ALD1117PAL
ALD1117PAL
MOSFET 2P-CH 10.6V 8DIP
Advanced Linear Devices, Inc.
1,022
In Stock
Active
Tube
Active
 8-DIP (0.300", 7.62mm) Through Hole 2 P-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - 3pF @ 5V 1800Ohm @ 5V - - 1.2V @ 1µA 8-PDIP - -
ALD1103PBL
ALD1103PBL
MOSFET 2N/2P-CH 10.6V 14DIP
Advanced Linear Devices, Inc.
1,558
In Stock
Active
Tube
Active
 14-DIP (0.300", 7.62mm) Through Hole 2 N and 2 P-Channel Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V 40mA, 16mA 10pF @ 5V 75Ohm @ 5V - - 1V @ 10µA 14-PDIP - -
ALD210800SCL
ALD210800SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Advanced Linear Devices, Inc.
1,048
In Stock
Active
EPAD®, Zero Threshold™
Tube
Active
 16-SOIC (0.154", 3.90mm Width) Surface Mount 4 N-Channel, Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V 80mA 15pF @ 5V 25Ohm - Logic Level Gate 20mV @ 10µA 16-SOIC - -
ALD1116SAL
ALD1116SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices, Inc.
4,471
In Stock
Active
Tube
Active
 8-SOIC (0.154", 3.90mm Width) Surface Mount 2 N-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V - 3pF @ 5V 500Ohm @ 5V - - 1V @ 1µA 8-SOIC - -
ALD114904SAL
ALD114904SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices, Inc.
1,017
In Stock
Active
EPAD®
Tube
Active
 8-SOIC (0.154", 3.90mm Width) Surface Mount 2 N-Channel (Dual) Matched Pair 0°C ~ 70°C (TJ) MOSFET (Metal Oxide) 500mW 10.6V 12mA, 3mA 2.5pF @ 5V 500Ohm @ 3.6V - Depletion Mode 360mV @ 1µA 8-SOIC - -