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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
179 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
GCMX040B120S1-E1
GCMX040B120S1-E1
SIC 1200V 40M MOSFET SOT-227
SemiQ
1,107
In Stock
Active
Tube
Active
 SOT-227-4, miniBLOC Chassis Mount -55°C ~ 175°C (TJ) SiC (Silicon Carbide Junction Transistor) N-Channel 57A (Tc) 52mOhm @ 40A, 20V - 242W (Tc) 4V @ 10mA SOT-227 - 20V +25V, -10V 1200 V 121 nC @ 20 V 3185 pF @ 1000 V -
GCMX080B120S1-E1
GCMX080B120S1-E1
SIC 1200V 80M MOSFET SOT-227
SemiQ
1,060
In Stock
Active
Tube
Active
 SOT-227-4, miniBLOC Chassis Mount -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 30A (Tc) 100mOhm @ 20A, 20V - 142W (Tc) 4V @ 10mA SOT-227 - 20V +25V, -10V 1200 V 58 nC @ 20 V 1336 pF @ 1000 V -
GCMS040B120S1-E1
GCMS040B120S1-E1
SIC 1200V 40M MOSFET & 15A SBD S
SemiQ
1,088
In Stock
Active
Tube
Active
 SOT-227-4, miniBLOC Chassis Mount -55°C ~ 175°C (TJ) SiC (Silicon Carbide Junction Transistor) N-Channel 57A (Tc) 52mOhm @ 40A, 20V - 242W (Tc) 4V @ 10mA SOT-227 - 20V +25V, -10V 1200 V 124 nC @ 20 V 3110 pF @ 1000 V -
GCMS080B120S1-E1
GCMS080B120S1-E1
SIC 1200V 80M MOSFET & 10A SBD S
SemiQ
1,040
In Stock
Active
Tube
Active
 SOT-227-4, miniBLOC Chassis Mount -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 30A (Tc) 100mOhm @ 20A, 20V - 142W (Tc) 4V @ 10mA SOT-227 - 20V +25V, -10V 1200 V 58 nC @ 20 V 1374 pF @ 1000 V -
GP2T080A120U
GP2T080A120U
SIC MOSFET 1200V 80M TO-247-3L
SemiQ
2,399
In Stock
Active
Tube
Active
 TO-247-3 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 35A (Tc) 100mOhm @ 20A, 20V - 188W (Tc) 4V @ 10mA TO-247-3 - 20V +25V, -10V 1200 V 58 nC @ 20 V 1377 pF @ 1000 V -
GP2T040A120U
GP2T040A120U
SIC MOSFET 1200V 40M TO-247-3L
SemiQ
1,061
In Stock
Active
Tube
Active
 TO-247-3 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 63A (Tc) 52mOhm @ 40A, 20V - 322W (Tc) 4V @ 10mA TO-247-3 - 20V +25V, -10V 1200 V 118 nC @ 20 V 3192 pF @ 1000 V -
GP2T040A120H
GP2T040A120H
SIC MOSFET 1200V 40M TO-247-4L
SemiQ
1,055
In Stock
Active
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 63A (Tc) 52mOhm @ 40A, 20V - 322W (Tc) 4V @ 10mA TO-247-4 - 20V +25V, -10V 1200 V 118 nC @ 20 V 3192 pF @ 1000 V -
GP2T080A120H
GP2T080A120H
SIC MOSFET 1200V 80M TO-247-4L
SemiQ
1,013
In Stock
Active
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 35A (Tc) 100mOhm @ 20A, 20V - 188W (Tc) 4V @ 10mA TO-247-4 - 20V +25V, -10V 1200 V 61 nC @ 20 V 1377 pF @ 1000 V -
GHXS060B120S-D3
GHXS060B120S-D3
DIODE MOD SIC 1200V 161A SOT227
SemiQ
1,028
In Stock
Discontinued
Tube
Discontinued
 SOT-227-4, miniBLOC Chassis Mount - SiC (Silicon Carbide) Schottky - - - - - - SOT-227 - - - - - - -
GP3D060A120U
GP3D060A120U
DIODE ARR SIC 1200V 30A TO247-3
SemiQ
1,000
In Stock
Active
Amp+™
Tube
Active
 TO-247-3 Through Hole - SiC (Silicon Carbide) Schottky - - - - - - TO-247-3 - - - - - - -