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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
10,000 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
GSFA95R500
GSFA95R500
MOSFET, N-CH, SINGLE, 10.00A, 95
Good Ark Semiconductor
1,990
In Stock
Active
Tube
Active
 TO-247-3 Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) N-Channel 10A (Tj) 500mOhm @ 5A, 10V - 151W (Tj) 3.9V @ 250µA TO-247 - 10V ±30V 950 V 24 nC @ 10 V 1568 pF @ 50 V -
CDMSJ22029-650 SL
CDMSJ22029-650 SL
SUPER JUNCTION MOSFETS
Central Semiconductor
1,497
In Stock
Active
Tube
Active
 TO-220-3 Full Pack Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) N-Channel 29A (Tc) 130mOhm @ 10.8A, 10V - 33W (Tc) 4V @ 250µA TO-220FP - 10V 30V 650 V 51 nC @ 10 V 1920 pF @ 400 V -
XP65AN1K2IT
XP65AN1K2IT
MOSFET N-CH 650V 7A TO220CFM
YAGEO XSEMI
2,000
In Stock
Active
XP65AN1K2
Tube
Active
 TO-220-3 Full Pack Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) N-Channel 7A (Tc) 1.2Ohm @ 3.5A, 10V - 1.92W (Ta), 34.7W (Tc) 4V @ 250µA TO-220CFM - 10V ±30V 650 V 44.8 nC @ 10 V 2048 pF @ 100 V -
TO220FMD10N65F
TO220FMD10N65F
MOSFET TO-220F N 650V 10A
NextGen Components
20,255
Marketplace
Active
TO-220F
Tube
Active
 - - - MOSFET (Metal Oxide) N-Channel 10A (Tc) 1Ohm @ 5A, 10V - - - - - 10V ±30V 650 V 34.2 nC @ 10 V - -
GSFH10120
GSFH10120
MOSFET, N-CH, SINGLE, 180.00A, 1
Good Ark Semiconductor
1,942
In Stock
Active
Tube
Active
 TO-220-3 Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) N-Channel 180A (Tc) 4.4mOhm @ 50A, 10V - 208W (Tc) 3.9V @ 250µA TO-220-3 - 10V ±20V 100 V 152 nC @ 10 V 8402 pF @ 50 V -
TW015Z120C,S1F
TW015Z120C,S1F
G3 1200V SIC-MOSFET TO-247-4L 1
Toshiba Electronic Devices and Storage Corporation
1,098
In Stock
Active
Tube
Active
 TO-247-4 Through Hole 175°C SiC (Silicon Carbide Junction Transistor) N-Channel 100A (Tc) 21mOhm @ 50A, 18V - 431W (Tc) 5V @ 11.7mA TO-247-4L(X) - 18V +25V, -10V 1200 V 158 nC @ 18 V 6000 pF @ 800 V -
MSJP09N65A-BP
MSJP09N65A-BP
N-CHANNEL MOSFET, TO-220AB(H)
Micro Commercial Components (MCC)
6,000
In Stock
Active
Tube
Active
 TO-220-3 Through Hole -55°C ~ 150°C (TJ) MOSFET (Metal Oxide) N-Channel 9A (Tc) 960mOhm @ 1.5A, 10V - 113W (Tj) 4V @ 250µA TO-220AB (H) - 10V ±30V 650 V 10.6 nC @ 10 V 383 pF @ 30 V -
R6020YNZ4C13
R6020YNZ4C13
NCH 600V 20A, TO-247, POWER MOSF
ROHM Semiconductor
1,600
In Stock
Active
Tube
Active
 TO-247-3 Through Hole 150°C (TJ) MOSFET (Metal Oxide) N-Channel 20A (Tc) 185mOhm @ 6A, 12V - 182W (Tc) 6V @ 1.65mA TO-247 - 10V, 12V ±30V 600 V 28 nC @ 10 V 1200 pF @ 100 V -
R6020YNX3C16
R6020YNX3C16
NCH 600V 20A, TO-220AB, POWER MO
ROHM Semiconductor
1,975
In Stock
Active
Tube
Active
 TO-220-3 Through Hole 150°C (TJ) MOSFET (Metal Oxide) N-Channel 20A (Tc) 185mOhm @ 6A, 12V - 182W (Tc) 6V @ 1.65mA TO-220AB - 10V, 12V ±30V 600 V 28 nC @ 10 V 1200 pF @ 100 V -
E3M0040120K
E3M0040120K
SIC, MOSFET, 40M, 1200V, TO-247-
Wolfspeed
1,316
In Stock
Active
E
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiC (Silicon Carbide Junction Transistor) N-Channel 57A (Tc) 53mOhm @ 31.9A, 15V - 242W 3.6V @ 8.77mA TO-247-4L Automotive 15V +19V, -8V 1200 V 94 nC @ 15 V 2726 pF @ 1000 V AEC-Q101